ME2308D
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2308D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 3.8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 4.7
nC
trⓘ - Rise Time: 128
nS
Cossⓘ -
Output Capacitance: 22
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06
Ohm
Package:
SOT23
ME2308D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2308D
Datasheet (PDF)
..1. Size:921K matsuki electric
me2308d me2308d-g.pdf 
ME2308D/ME2308D-G N-Channel 30V (D-S) MOSFET ,ESD Protection GENERAL DESCRIPTION FEATURES The ME2308D is the N-Channel logic enhancement mode power RDS(ON)60m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)70m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)100m@VGS=2.5V minimize
0.1. Size:830K matsuki electric
me2308dn-g.pdf
ME2308DN-G N-Channel 20V (D-S) MOSFET ,ESD ProtectionGENERAL DESCRIPTION FEATURES The ME2308DN-G is the N-Channel logic enhancement mode power RDS(ON) 0.35 @VGS=4.5Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 0.45 @VGS=2.5Vtrench technology. This high density process is especially tailored to RDS(ON) 0.65 @VGS=1.8Vmini
8.1. Size:1540K matsuki electric
me2308s me2308s-g.pdf
ME2308S/ME2308S-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2308S is the N-Channel logic enhancement mode power RDS(ON) 100m@VGS=10Vfield effect transistors are produced using high cell density, DMOS RDS(ON) 130m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS
8.2. Size:850K cn vbsemi
me2308s.pdf
ME2308Swww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G
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