ME2312 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME2312
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 5.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 11 nC
Rise Time (tr): 17 nS
Drain-Source Capacitance (Cd): 85.7 pF
Maximum Drain-Source On-State Resistance (Rds): 0.033 Ohm
Package: SOT23
ME2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME2312 Datasheet (PDF)
me2312 me2312-g.pdf
ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON)33m@VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON)40m@VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON)51m@VGS=1.8V minimize on-state resist
me2313 me2313-g.pdf
ME2313/ME2313-GP-Channel 20V(D-S) MOSFET BSS84 GENERAL DESCRIPTION FEATURES The ME2313 is the P-Channel logic enhancement mode power field RDS(ON)48m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)52m@VGS=-4.5V technology. This high density process is especially tailored to RDS(ON)65m@VGS=-2.5V minimize on-state r
me2310.pdf
ME2310www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
