ME2313 Specs and Replacement
Type Designator: ME2313
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21.7 nS
Cossⓘ - Output Capacitance: 93.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
Package: SOT23
ME2313 substitution
- MOSFET ⓘ Cross-Reference Search
ME2313 datasheet
me2313 me2313-g.pdf
ME2313/ME2313-G P-Channel 20V(D-S) MOSFET BSS84 GENERAL DESCRIPTION FEATURES The ME2313 is the P-Channel logic enhancement mode power field RDS(ON) 48m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 52m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 65m @VGS=-2.5V minimize on-state r... See More ⇒
me2312 me2312-g.pdf
ME2312/ME2312-G N-Channel 20-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2312-G is the N-Channel logic enhancement mode power RDS(ON) 33m @VGS=4.5V field effect transistors are produced using high cell density, DMOS RDS(ON) 40m @VGS=2.5V trench technology. This high density process is especially tailored to RDS(ON) 51m @VGS=1.8V minimize on-state resist... See More ⇒
me2310.pdf
ME2310 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G 1... See More ⇒
Detailed specifications: ME2306N-G, ME2306S, ME2306S-G, ME2308D, ME2308D-G, ME2308DN-G, ME2312, ME2312-G, 2SK3568, ME2313-G, ME2320D2-G, ME2320DS, ME2320DS-G, ME2324D, ME2324D-G, ME2325S, ME2325S-G
Keywords - ME2313 MOSFET specs
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