All MOSFET. ME2345AS-G Datasheet

 

ME2345AS-G Datasheet and Replacement


   Type Designator: ME2345AS-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22.5 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: SOT23
 

 ME2345AS-G substitution

   - MOSFET ⓘ Cross-Reference Search

 

ME2345AS-G Datasheet (PDF)

 ..1. Size:1253K  matsuki electric
 me2345as me2345as-g.pdf pdf_icon

ME2345AS-G

ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m@VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m@VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m@VGS=-2.5V minimize on-s

 7.1. Size:1339K  matsuki electric
 me2345a me2345a-g.pdf pdf_icon

ME2345AS-G

ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 80m@VGS=-4.5Vtechnology. This high density process is especially tailored to RDS(ON) 100m@VGS=-2.5Vminimize on-state res

Datasheet: ME2320D2-G , ME2320DS , ME2320DS-G , ME2324D , ME2324D-G , ME2325S , ME2325S-G , ME2345AS , IRF2807 , ME2355AN , ME2355AN-G , ME25N15AL , ME25N15AL-G , ME2606 , ME2606-G , ME2614 , ME2614-G .

History: 2SK1181 | HYG060N08NS1V | ME2313 | SSG4841P | HM4407 | SWD4N50K | SI2305CDS-T1-GE3

Keywords - ME2345AS-G MOSFET datasheet

 ME2345AS-G cross reference
 ME2345AS-G equivalent finder
 ME2345AS-G lookup
 ME2345AS-G substitution
 ME2345AS-G replacement

 

 
Back to Top

 


 
.