ME2345AS-G Specs and Replacement
Type Designator: ME2345AS-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22.5 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT23
ME2345AS-G substitution
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ME2345AS-G datasheet
me2345as me2345as-g.pdf
ME2345AS/ME2345AS-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345AS is the P-Channel logic enhancement mode power RDS(ON) 65m @VGS=-10V field effect transistors are produced using high cell density , DMOS RDS(ON) 75m @VGS=-4.5V trench technology. This high density process is especially tailored to RDS(ON) 105m @VGS=-2.5V minimize on-s... See More ⇒
me2345a me2345a-g.pdf
ME2345A/ME2345A-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2345A is the P-Channel logic enhancement mode power field RDS(ON) 68m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 80m @VGS=-4.5V technology. This high density process is especially tailored to RDS(ON) 100m @VGS=-2.5V minimize on-state res... See More ⇒
Detailed specifications: ME2320D2-G, ME2320DS, ME2320DS-G, ME2324D, ME2324D-G, ME2325S, ME2325S-G, ME2345AS, STF13NM60N, ME2355AN, ME2355AN-G, ME25N15AL, ME25N15AL-G, ME2606, ME2606-G, ME2614, ME2614-G
Keywords - ME2345AS-G MOSFET specs
ME2345AS-G cross reference
ME2345AS-G equivalent finder
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ME2345AS-G substitution
ME2345AS-G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
