All MOSFET. ME2614 Datasheet

 

ME2614 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME2614
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 3.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19.2 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 57 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.166 Ohm
   Package: SOT223

 ME2614 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME2614 Datasheet (PDF)

 ..1. Size:1152K  matsuki electric
 me2614 me2614-g.pdf

ME2614 ME2614

ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON)166m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)213m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 9.1. Size:983K  matsuki electric
 me2612 me2612-g.pdf

ME2614 ME2614

ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)375m@VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON)390m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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