ME2614 Specs and Replacement

Type Designator: ME2614

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 57 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.166 Ohm

Package: SOT223

ME2614 substitution

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ME2614 datasheet

 ..1. Size:1152K  matsuki electric
 me2614 me2614-g.pdf pdf_icon

ME2614

ME2614/ME2614-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME2614 is the N-Channel logic enhancement mode power RDS(ON) 166m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 213m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

 9.1. Size:983K  matsuki electric
 me2612 me2612-g.pdf pdf_icon

ME2614

ME2612/ME2612-G N-Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 375m @VGS=10V The ME2612 is the N-Channel logic enhancement mode power RDS(ON) 390m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially ta... See More ⇒

Detailed specifications: ME2345AS, ME2345AS-G, ME2355AN, ME2355AN-G, ME25N15AL, ME25N15AL-G, ME2606, ME2606-G, IRFB31N20D, ME2614-G, ME2620-G, ME3205F, ME3205F-G, ME3205H-G, ME3424D, ME3424D-G, ME3443

Keywords - ME2614 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.