ME3205F
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME3205F
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 52
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 74
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 141
nC
trⓘ - Rise Time: 263
nS
Cossⓘ -
Output Capacitance: 366
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006
Ohm
Package:
TO220F
ME3205F
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME3205F
Datasheet (PDF)
..1. Size:1092K matsuki electric
me3205f me3205f-g.pdf
ME3205F/ME3205F-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME3205F is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro
8.1. Size:1568K matsuki electric
me3205h-g.pdf
ME3205H-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10V The ME3205H-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especia
8.2. Size:1186K matsuki electric
me3205t me3205t-g.pdf
ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce
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