ME3205H-G Datasheet and Replacement
Type Designator: ME3205H-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 109.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 334 nS
Cossⓘ - Output Capacitance: 319 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO263
ME3205H-G substitution
ME3205H-G Datasheet (PDF)
me3205h-g.pdf

ME3205H-G N-Channel 60-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10V The ME3205H-G is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density process is especia
me3205f me3205f-g.pdf

ME3205F/ME3205F-G N-Channel 60V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)6m@VGS=10V The ME3205F is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro
me3205t me3205t-g.pdf

ME3205T/ME3205T-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.5m@VGS=10VThe ME3205T is the N-Channel logic enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistors are produced using high cell density, DMOS trench Exceptional on-resistance and maximum DC currenttechnology. This high density proce
Datasheet: ME25N15AL-G , ME2606 , ME2606-G , ME2614 , ME2614-G , ME2620-G , ME3205F , ME3205F-G , STP65NF06 , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , ME3483-G .
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