All MOSFET. ME3424D Datasheet

 

ME3424D Datasheet and Replacement


   Type Designator: ME3424D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
   Package: TSOP6
 

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ME3424D Datasheet (PDF)

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ME3424D

ME3424D/ME3424D-G N-Channel 30V (D-S) MOSFET , ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON)28m@VGS=10V The ME3424D is the N-Channel logic enhancement mode power RDS(ON)42m@VGS=4.5V field effect transistors are produced using high cell density , DMOS ESD Protected trench technology. This high density process is especially tailored to Super high

Datasheet: ME2606 , ME2606-G , ME2614 , ME2614-G , ME2620-G , ME3205F , ME3205F-G , ME3205H-G , IRF1405 , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , ME3483-G , ME3920D .

History: NTGS3441BT1G | TPA60R330M

Keywords - ME3424D MOSFET datasheet

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