ME3424D Specs and Replacement

Type Designator: ME3424D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: TSOP6

ME3424D substitution

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ME3424D datasheet

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 me3424d me3424d-g.pdf pdf_icon

ME3424D

ME3424D/ME3424D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 28m @VGS=10V The ME3424D is the N-Channel logic enhancement mode power RDS(ON) 42m @VGS=4.5V field effect transistors are produced using high cell density , DMOS ESD Protected trench technology. This high density process is especially tailored to Super high ... See More ⇒

Detailed specifications: ME2606, ME2606-G, ME2614, ME2614-G, ME2620-G, ME3205F, ME3205F-G, ME3205H-G, IRF830, ME3424D-G, ME3443, ME3443-G, ME3449D, ME3449D-G, ME3483, ME3483-G, ME3920D

Keywords - ME3424D MOSFET specs

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