All MOSFET. ME3483 Datasheet

 

ME3483 Datasheet and Replacement


   Type Designator: ME3483
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT26
 

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ME3483 Datasheet (PDF)

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 me3483 me3483-g.pdf pdf_icon

ME3483

ME3483/ME3483-G P-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME3483 is the P-Channel logic enhancement mode power field RDS(ON)80m@VGS=-10Veffect transistors are produced using high cell density, DMOS trench RDS(ON)100m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

Datasheet: ME3205F-G , ME3205H-G , ME3424D , ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , EMB04N03H , ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G .

History: ME4832-G | ME4894-G

Keywords - ME3483 MOSFET datasheet

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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