All MOSFET. ME3920D-G Datasheet

 

ME3920D-G Datasheet and Replacement


   Type Designator: ME3920D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TSOP6
 

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ME3920D-G Datasheet (PDF)

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ME3920D-G

ME3920D/ME3920D-G N-Channel 30V (D-S) MOSFET , ESD Protected GENERAL DESCRIPTION FEATURES The ME3920D-G is the Dual N-Channel logic enhancement mode RDS(ON)30m@VGS=10V power field effect transistors, using high cell density, DMOS trench RDS(ON)45m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extreme

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ME3920D-G

ME3920-G Dual N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES FEATURES RDS(ON)24m@ VGS =10V The ME3920-G is the Dual N-Channel logic enhancement mode RDS(ON)46m@VGS=4.5V power field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tail

Datasheet: ME3424D-G , ME3443 , ME3443-G , ME3449D , ME3449D-G , ME3483 , ME3483-G , ME3920D , HY1906P , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , ME4468 , ME4468-G , ME4470 .

History: RP1E125XN | IRFP4004 | SI2300BDS-T1-GE3 | MTP20N20E | FDPC8011S | IRF6894MPBF | JCS10N70FH

Keywords - ME3920D-G MOSFET datasheet

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