All MOSFET. ME4425 Datasheet

 

ME4425 Datasheet and Replacement


   Type Designator: ME4425
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 18.3 nS
   Cossⓘ - Output Capacitance: 383 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP8
      - MOSFET Cross-Reference Search

 

ME4425 Datasheet (PDF)

 ..1. Size:1054K  matsuki electric
me4425 me4425-g.pdf pdf_icon

ME4425

ME4425/ME4425-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4425 is the P-Channel logic enhancement mode power field RDS(ON)14m@VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON)19m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 8N60KG-TF1-T | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | STD3NK80ZT4 | STD4N62K3

Keywords - ME4425 MOSFET datasheet

 ME4425 cross reference
 ME4425 equivalent finder
 ME4425 lookup
 ME4425 substitution
 ME4425 replacement

 

 
Back to Top

 


 
.