ME4425 Datasheet and Replacement
Type Designator: ME4425
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 10.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18.3 nS
Cossⓘ - Output Capacitance: 383 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: SOP8
- MOSFET Cross-Reference Search
ME4425 Datasheet (PDF)
me4425 me4425-g.pdf

ME4425/ME4425-G P-Channel 30-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4425 is the P-Channel logic enhancement mode power field RDS(ON)14m@VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON)19m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 8N60KG-TF1-T | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | STD3NK80ZT4 | STD4N62K3
Keywords - ME4425 MOSFET datasheet
ME4425 cross reference
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History: 8N60KG-TF1-T | RW1C020UN | IRF441 | AP9926GEO | GSM3050S | STD3NK80ZT4 | STD4N62K3



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