ME4457 Specs and Replacement

Type Designator: ME4457

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 99 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOP8

ME4457 substitution

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ME4457 datasheet

 ..1. Size:1234K  matsuki electric
 me4457 me4457-g.pdf pdf_icon

ME4457

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON) 45m @VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 68m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(... See More ⇒

 9.1. Size:1242K  matsuki electric
 me4454 me4454-g.pdf pdf_icon

ME4457

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON) 13m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 18m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O... See More ⇒

Detailed specifications: ME3449D-G, ME3483, ME3483-G, ME3920D, ME3920D-G, ME3920-G, ME4425, ME4425-G, AO4468, ME4457-G, ME4468, ME4468-G, ME4470, ME4470-G, ME4473-G, ME4485, ME4485-G

Keywords - ME4457 MOSFET specs

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