All MOSFET. ME4457 Datasheet

 

ME4457 Datasheet and Replacement


   Type Designator: ME4457
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8
 

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ME4457 Datasheet (PDF)

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 me4457 me4457-g.pdf pdf_icon

ME4457

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

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 me4454 me4454-g.pdf pdf_icon

ME4457

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

Datasheet: ME3449D-G , ME3483 , ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , IRFP064N , ME4457-G , ME4468 , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G .

History: NVTFS6H880N | SWB088R08E8T

Keywords - ME4457 MOSFET datasheet

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