All MOSFET. ME4457 Datasheet

 

ME4457 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME4457
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 5.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 99 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOP8

 ME4457 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME4457 Datasheet (PDF)

 ..1. Size:1234K  matsuki electric
 me4457 me4457-g.pdf

ME4457 ME4457

ME4457/ME4457-G P-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4457 is the P-Channel logic enhancement mode power field RDS(ON)45m@VGS=-10V effect transistors are produced using high cell density, DMOS trench RDS(ON)68m@VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(

 9.1. Size:1242K  matsuki electric
 me4454 me4454-g.pdf

ME4457 ME4457

ME4454/ME4454-G N-Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4454 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)18m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(O

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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