All MOSFET. ME4468 Datasheet

 

ME4468 Datasheet and Replacement


   Type Designator: ME4468
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.4 nS
   Cossⓘ - Output Capacitance: 285 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP8
 

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ME4468 Datasheet (PDF)

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 me4468 me4468-g.pdf pdf_icon

ME4468

ME4468/ ME4468-G N-Channel 60V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe ME4468 is the N-Channel logic enhancement mode power field RDS(ON)13m@VGS=4.5Veffect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON)This high density process is especially tailored to minimize o

Datasheet: ME3483-G , ME3920D , ME3920D-G , ME3920-G , ME4425 , ME4425-G , ME4457 , ME4457-G , IRFZ44N , ME4468-G , ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G , ME4832 , ME4832-G .

History: KHB4D5N60F | SFB063N80AC3 | 2SK1488 | IRF3706L | CS4N65A3TDY | NCE65T540 | SI2319DS

Keywords - ME4468 MOSFET datasheet

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