ME4832 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4832
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 40.3 nC
trⓘ - Rise Time: 71.7 nS
Cossⓘ - Output Capacitance: 202 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: SOP8
ME4832 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4832 Datasheet (PDF)
me4832 me4832-g.pdf
ME4832/ME4832-G N-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5.5 m@VGS=10VThe ME4832-G is the N-Channel logic enhancement mode power RDS(ON)7.2m@VGS=4.5Vfield effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON)technology. This high density process is especially tailored to
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