ME4856-G Specs and Replacement

Type Designator: ME4856-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 358 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: SOP8

ME4856-G substitution

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ME4856-G datasheet

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ME4856-G

ME4856/ME4856-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4856 is the N-Channel logic enhancement mode power field RDS(ON) 6m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 8.5m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON) m... See More ⇒

Detailed specifications: ME4470, ME4470-G, ME4473-G, ME4485, ME4485-G, ME4832, ME4832-G, ME4856, IRF640, ME4894, ME4894-G, ME4906-G, ME4920, ME4920-G, ME4947, ME4947-G, ME4970A

Keywords - ME4856-G MOSFET specs

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