All MOSFET. ME4856-G Datasheet

 

ME4856-G Datasheet and Replacement


   Type Designator: ME4856-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOP8
 

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ME4856-G Datasheet (PDF)

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ME4856-G

ME4856/ME4856-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME4856 is the N-Channel logic enhancement mode power field RDS(ON)6m@VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON)8.5m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)m

Datasheet: ME4470 , ME4470-G , ME4473-G , ME4485 , ME4485-G , ME4832 , ME4832-G , ME4856 , IRFP460 , ME4894 , ME4894-G , ME4906-G , ME4920 , ME4920-G , ME4947 , ME4947-G , ME4970A .

History: NTHL080N120SC1A

Keywords - ME4856-G MOSFET datasheet

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