ME4894 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4894
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: SOP8
ME4894 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4894 Datasheet (PDF)
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me4894 me4894-g.pdf
me4894 me4894-g.pdf
ME4894/ME4894-G N-Channel 30-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4894-G is the N-Channel logic enhancement mode power RDS(ON)11m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)17.5m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RD
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