ME4920
MOSFET. Datasheet pdf. Equivalent
Type Designator: ME4920
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 11.5
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 65
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035
Ohm
Package:
SOP8
ME4920
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME4920
Datasheet (PDF)
..1. Size:892K matsuki electric
me4920 me4920-g.pdf
ME4920/ME4920-G Dual N-Channel 30-V (D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)35 m@VGS=10V The ME4920 is the N-Channel logic enhancement mode power field RDS(ON)45 m@VGS=4.5V effect transistors, using high cell density, DMOS trench technology. Super high density cell design for extremely low RDS(ON) This high density process is especially tailored to
9.1. Size:1135K matsuki electric
me4925 me4925-g.pdf
ME4925/ME4925-G Dual P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME4925 is the Dual P-Channel logic enhancement mode power RDS(ON)22m@VGS=-10Vfield effect transistors are produced using high cell density , DMOS RDS(ON)30m@VGS=-4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extremely
9.2. Size:829K cn vbsemi
me4925.pdf
ME4925www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD1 8
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