ME6874-G Specs and Replacement

Type Designator: ME6874-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.14 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TSOP6

ME6874-G substitution

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ME6874-G datasheet

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ME6874-G

ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET GENERAL DESCRIPTION FEATURES 20V/6.0A,RDS(ON)=25m @VGS=4.5V The ME6874 is the Dual N-Channel logic enhancement mode power 20V/5.2A,RDS(ON)=32m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high dens... See More ⇒

Detailed specifications: ME60N03S, ME60N03S-G, ME60N04, ME60N04-G, ME6600D-G, ME6606D-G, ME6612D-G, ME6874, AO3401, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, ME7232-G, ME7232S, ME7232S-G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.