All MOSFET. ME6874-G Datasheet

 

ME6874-G Datasheet and Replacement


   Type Designator: ME6874-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSOP6
 

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ME6874-G Datasheet (PDF)

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ME6874-G

ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET GENERAL DESCRIPTION FEATURES 20V/6.0A,RDS(ON)=25m@VGS=4.5V The ME6874 is the Dual N-Channel logic enhancement mode power 20V/5.2A,RDS(ON)=32m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high dens

Datasheet: ME60N03S , ME60N03S-G , ME60N04 , ME60N04-G , ME6600D-G , ME6606D-G , ME6612D-G , ME6874 , AO3400 , ME70N03S , ME70N03S-G , ME70N10T , ME70N10T-G , ME7232 , ME7232-G , ME7232S , ME7232S-G .

History: HGB042N10S | SM2321PSA | CHM62A2PAGP | SVG104R0NS | MX2N4861 | ELM14614AA | RQJ0304DQDQS

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