All MOSFET. ME6874-G Datasheet

 

ME6874-G MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME6874-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 5.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TSOP6

 ME6874-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME6874-G Datasheet (PDF)

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 me6874 me6874-g.pdf

ME6874-G ME6874-G

ME6874/ME6874-G Dual N-Channel 20-V (G-S) MOSFET GENERAL DESCRIPTION FEATURES 20V/6.0A,RDS(ON)=25m@VGS=4.5V The ME6874 is the Dual N-Channel logic enhancement mode power 20V/5.2A,RDS(ON)=32m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high dens

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