All MOSFET. ME70N10T Datasheet

 

ME70N10T MOSFET. Datasheet pdf. Equivalent


   Type Designator: ME70N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 167 W
   Maximum Drain-Source Voltage |Vds|: 100 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 78.3 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 130 nC
   Rise Time (tr): 77 nS
   Drain-Source Capacitance (Cd): 438 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.017 Ohm
   Package: TO220

 ME70N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ME70N10T Datasheet (PDF)

 ..1. Size:1081K  matsuki electric
 me70n10t me70n10t-g.pdf

ME70N10T ME70N10T

ME70N10T / ME70N10T-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)17m@VGS=10V The ME70N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high de

 9.1. Size:1428K  matsuki electric
 me70n03s me70n03s-g.pdf

ME70N10T ME70N10T

ME70N03S/ME70N03S-G30V N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.6m@VGS=10V The ME70N03S is the N-Channel logic enhancement mode RDS(ON)11m@VGS=4.5V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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