All MOSFET. ME70N10T-G Datasheet

 

ME70N10T-G Datasheet and Replacement


   Type Designator: ME70N10T-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 167 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 78.3 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 438 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO220
 

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ME70N10T-G Datasheet (PDF)

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ME70N10T-G

ME70N10T / ME70N10T-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)17m@VGS=10V The ME70N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high de

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 me70n03s me70n03s-g.pdf pdf_icon

ME70N10T-G

ME70N03S/ME70N03S-G30V N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)6.6m@VGS=10V The ME70N03S is the N-Channel logic enhancement mode RDS(ON)11m@VGS=4.5V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is

Datasheet: ME6600D-G , ME6606D-G , ME6612D-G , ME6874 , ME6874-G , ME70N03S , ME70N03S-G , ME70N10T , IRF9540N , ME7232 , ME7232-G , ME7232S , ME7232S-G , ME7306-G , ME7345-G , ME7356-G , ME7362 .

History: AM2341P | HFB1N60F | BLF6G22LS-130 | GSMBSS123 | BRCS2301EMF | 2SK2411 | MMFT70R380PTH

Keywords - ME70N10T-G MOSFET datasheet

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