ME70N10T-G MOSFET. Datasheet pdf. Equivalent
Type Designator: ME70N10T-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 167 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 78.3 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 130 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 438 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO220
ME70N10T-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME70N10T-G Datasheet (PDF)
me70n10t me70n10t-g.pdf
ME70N10T / ME70N10T-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)17m@VGS=10V The ME70N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high de
me70n03s me70n03s-g.pdf
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