ME70N10T-G Specs and Replacement

Type Designator: ME70N10T-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 167 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 78.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 438 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO220

ME70N10T-G substitution

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ME70N10T-G datasheet

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ME70N10T-G

ME70N10T / ME70N10T-G N- Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 17m @VGS=10V The ME70N10T is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high de... See More ⇒

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ME70N10T-G

ME70N03S/ME70N03S-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 6.6m @VGS=10V The ME70N03S is the N-Channel logic enhancement mode RDS(ON) 11m @VGS=4.5V power field effect transistors are produced using high cell density, Super high density cell design for extremely low RDS(ON) DMOS trench technology. This high density process is ... See More ⇒

Detailed specifications: ME6600D-G, ME6606D-G, ME6612D-G, ME6874, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, SPP20N60C3, ME7232, ME7232-G, ME7232S, ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362

Keywords - ME70N10T-G MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.