ME7232-G Specs and Replacement

Type Designator: ME7232-G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50.8 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: DFN2X2

ME7232-G substitution

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ME7232-G datasheet

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ME7232-G

ME7232/ME7232-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 4.5 m @VGS=10V The ME7232-G is the N-Channel logic enhancement mode power RDS(ON) 6.8 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

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ME7232-G

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5 m @VGS=10V The ME7232S-G is the N-Channel logic enhancement mode power RDS(ON) 7 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

 8.2. Size:891K  matsuki electric
me7232s me7232s-g.pdf pdf_icon

ME7232-G

ME7232S/ME7232S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5 m @VGS=10V The ME7232S-G is the N-Channel logic enhancement mode power RDS(ON) 7 m @VGS=4.5V field effect transistors, using high cell density, DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is especially tailored to ... See More ⇒

Detailed specifications: ME6612D-G, ME6874, ME6874-G, ME70N03S, ME70N03S-G, ME70N10T, ME70N10T-G, ME7232, K4145, ME7232S, ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G

Keywords - ME7232-G MOSFET specs

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