All MOSFET. ME7362 Datasheet

 

ME7362 Datasheet and Replacement


   Type Designator: ME7362
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20.4 nS
   Cossⓘ - Output Capacitance: 1051 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
   Package: POWERDFN5X6
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ME7362 Datasheet (PDF)

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ME7362

ME7362/ME7362-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7362 is the N-Channel logic enhancement mode power field RDS(ON)2 m@VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON)3 m@VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

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History: NCEP0178A | 2SK3547 | 2SK1712 | MTW10N100E | STD40N2LH5 | P085AATX | SVFP12N60CFJD

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