ME7362 Specs and Replacement
Type Designator: ME7362
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 115 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20.4 nS
Cossⓘ - Output Capacitance: 1051 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: POWERDFN5X6
ME7362 substitution
- MOSFET ⓘ Cross-Reference Search
ME7362 datasheet
me7362 me7362-g.pdf
ME7362/ME7362-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7362 is the N-Channel logic enhancement mode power field RDS(ON) 2 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 3 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)... See More ⇒
Detailed specifications: ME70N10T-G, ME7232, ME7232-G, ME7232S, ME7232S-G, ME7306-G, ME7345-G, ME7356-G, IRFB3607, ME7362-G, ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
