ME75N03 Specs and Replacement

Type Designator: ME75N03

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 71 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 393 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm

Package: TO252

ME75N03 substitution

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ME75N03 datasheet

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 me75n03 me75n03-g.pdf pdf_icon

ME75N03

ME75N03/ME75N03-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.2m @VGS=10V The ME75N03 is the N-Channel logic enhancement mode power RDS(ON) 8m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espe... See More ⇒

Detailed specifications: ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, NCEP15T14, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632, ME7632-G, ME7632S

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.