ME75N03 MOSFET. Datasheet pdf. Equivalent
Type Designator: ME75N03
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 71 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 56 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 393 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TO252
ME75N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ME75N03 Datasheet (PDF)
me75n03 me75n03-g.pdf
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ME75N03/ME75N03-G 30V N-Channel Enhancement Mode MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)5.2m@VGS=10V The ME75N03 is the N-Channel logic enhancement mode power RDS(ON)8m@VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espe
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