ME75N03 Specs and Replacement
Type Designator: ME75N03
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 71 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 393 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0052 Ohm
Package: TO252
ME75N03 substitution
- MOSFET ⓘ Cross-Reference Search
ME75N03 datasheet
me75n03 me75n03-g.pdf
ME75N03/ME75N03-G 30V N-Channel Enhancement Mode MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5.2m @VGS=10V The ME75N03 is the N-Channel logic enhancement mode power RDS(ON) 8m @VGS=4.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is espe... See More ⇒
Detailed specifications: ME7232S-G, ME7306-G, ME7345-G, ME7356-G, ME7362, ME7362-G, ME7423S-G, ME7442D-G, NCEP15T14, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632, ME7632-G, ME7632S
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
