ME7620 Datasheet and Replacement
Type Designator: ME7620
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 127 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.9 nS
Cossⓘ - Output Capacitance: 741 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002 Ohm
Package: POWERDFN5X6
ME7620 substitution
ME7620 Datasheet (PDF)
me7620 me7620-g.pdf

ME7620/ME7620-G N-Channel 20V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7620-G is the N-Channel logic enhancement mode power RDS(ON)2.2 m@VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON)2.4 m@VGS=4.5V trench technology. This high density process is especially tailored to RDS(ON)3.0 m@VGS=2.5V minimize on-state res
Datasheet: ME7362 , ME7362-G , ME7423S-G , ME7442D-G , ME75N03 , ME75N03-G , ME7607 , ME7607-G , 13N50 , ME7620-G , ME7632 , ME7632-G , ME7632S , ME7632S-G , ME7636 , ME7636-G , ME7640 .
History: IRL3714ZSPBF | AP50WN1K0I | RSS060P05FRA | SHD225609 | FDD5810-F085 | PNM23T100V6 | IRL3714ZPBF
Keywords - ME7620 MOSFET datasheet
ME7620 cross reference
ME7620 equivalent finder
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History: IRL3714ZSPBF | AP50WN1K0I | RSS060P05FRA | SHD225609 | FDD5810-F085 | PNM23T100V6 | IRL3714ZPBF



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