ME7632 Specs and Replacement
Type Designator: ME7632
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 37.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 113 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 58.3 nS
Cossⓘ - Output Capacitance: 583 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm
Package: POWERDFN5X6
ME7632 substitution
- MOSFET ⓘ Cross-Reference Search
ME7632 datasheet
me7632 me7632-g.pdf
Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f... See More ⇒
me7632s me7632s-g.pdf
ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre... See More ⇒
me7636 me7636-g.pdf
ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 2.5m @VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON) 3.3m @VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp... See More ⇒
Detailed specifications: ME7423S-G, ME7442D-G, ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, BS170, ME7632-G, ME7632S, ME7632S-G, ME7636, ME7636-G, ME7640, ME7640-G, ME7642
Keywords - ME7632 MOSFET specs
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