ME7632S Datasheet. Specs and Replacement

Type Designator: ME7632S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 113 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58.3 nS

Cossⓘ - Output Capacitance: 583 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.00185 Ohm

Package: DFN3.3X3.3

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ME7632S datasheet

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me7632s me7632s-g.pdf pdf_icon

ME7632S

ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre... See More ⇒

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ME7632S

Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m @VGS=4.5V technology. This high density process is especially tailored to Super high density cell design f... See More ⇒

 9.1. Size:988K  matsuki electric
me7636 me7636-g.pdf pdf_icon

ME7632S

ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 2.5m @VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON) 3.3m @VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp... See More ⇒

Detailed specifications: ME75N03, ME75N03-G, ME7607, ME7607-G, ME7620, ME7620-G, ME7632, ME7632-G, IRFP450, ME7632S-G, ME7636, ME7636-G, ME7640, ME7640-G, ME7642, ME7642-G, ME7644

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