ME7636 Datasheet and Replacement
Type Designator: ME7636
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 26 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 660 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
Package: POWERDFN5X6
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ME7636 Datasheet (PDF)
me7636 me7636-g.pdf

ME7636/ME7636-G N-Channel 30V(D-S) Enhancement MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)2.5m@VGS=10V The ME7636 is the N-Channel logic enhancement mode power field RDS(ON)3.3m@VGS=4.5V effect transistors are produced using high cell density , DMOS trench Super high density cell design for extremely low RDS(ON) technology. This high density process is esp
me7632s me7632s-g.pdf

ME7632S/ME7632S-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7632S is the N-Channel logic enhancement mode power RDS(ON) 1.85 m @VGS=10Vfield effect transistors are produced using high cell density , DMOS RDS(ON) 3.6 m@VGS=4.5Vtrench technology. This high density process is especially tailored to Super high density cell design for extre
me7632 me7632-g.pdf

Preliminary-ME7632/ME7632-G N-Channel 30V(D-S) MOSFETGENERAL DESCRIPTIONFEATURES The ME7632 is the N-Channel logic enhancement mode power field RDS(ON) 1.85 m @VGS=10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 3.6 m@VGS=4.5Vtechnology. This high density process is especially tailored to Super high density cell design f
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IXFN48N50 | PHW9N60E | STK2NA60 | MTB12N03J3 | ASDM30P11TD-R | 2SK3089 | MTB60B06Q8
Keywords - ME7636 MOSFET datasheet
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History: IXFN48N50 | PHW9N60E | STK2NA60 | MTB12N03J3 | ASDM30P11TD-R | 2SK3089 | MTB60B06Q8



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