All MOSFET. ME7686-G Datasheet

 

ME7686-G Datasheet and Replacement


   Type Designator: ME7686-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: POWERDFN5X6
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ME7686-G Datasheet (PDF)

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ME7686-G

ME7686/ME7686-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7686-G is the N-Channel logic enhancement mode power RDS(ON)10.5m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)18m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre

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History: 2N4117 | NCEP85T25D | WMB014N04LG4 | SM7580NSF | ME4947-G | F5038H | IXFB72N55Q2

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