All MOSFET. ME7686-G Datasheet

 

ME7686-G Datasheet and Replacement


   Type Designator: ME7686-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 128 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: POWERDFN5X6
 

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ME7686-G Datasheet (PDF)

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ME7686-G

ME7686/ME7686-G N-Channel 30V(D-S) Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME7686-G is the N-Channel logic enhancement mode power RDS(ON)10.5m@VGS=10V field effect transistors are produced using high cell density , DMOS RDS(ON)18m@VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extre

Datasheet: ME7642-G , ME7644 , ME7644-G , ME7648 , ME7648-G , ME7648S , ME7648S-G , ME7686 , 8N60 , ME7705 , ME7705-G , ME7707 , ME7707-G , ME7732-G , ME7802S-G , ME7805S , ME7805S-G .

History: MCH6661 | MTN10N70EA | ME7648S-G | PJW1NA60 | NCE3050KA | GSM2318A | GSM2323

Keywords - ME7686-G MOSFET datasheet

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