All MOSFET. ME7705-G Datasheet

 

ME7705-G Datasheet and Replacement


   Type Designator: ME7705-G
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10.4 nS
   Cossⓘ - Output Capacitance: 358 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: POWERDFN5X6
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ME7705-G Datasheet (PDF)

 ..1. Size:933K  matsuki electric
 me7705 me7705-g.pdf pdf_icon

ME7705-G

ME7705/ME7705-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7705 is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely lo

 9.1. Size:936K  matsuki electric
 me7707 me7707-g.pdf pdf_icon

ME7705-G

ME7707/ME7707-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7707 is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IPD60R600P6 | WSD4098DN56 | FTP50N20R | 2SJ540 | IXFH110N10P | RSE002P03TL | IRFR4105

Keywords - ME7705-G MOSFET datasheet

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