ME7707 Specs and Replacement
Type Designator: ME7707
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 20.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 29 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44.9 nS
Cossⓘ - Output Capacitance: 221 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: POWERDFN5X6
ME7707 substitution
- MOSFET ⓘ Cross-Reference Search
ME7707 datasheet
me7707 me7707-g.pdf
ME7707/ME7707-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7707 is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely... See More ⇒
me7705 me7705-g.pdf
ME7705/ME7705-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7705 is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely lo... See More ⇒
Detailed specifications: ME7648, ME7648-G, ME7648S, ME7648S-G, ME7686, ME7686-G, ME7705, ME7705-G, AO3400A, ME7707-G, ME7732-G, ME7802S-G, ME7805S, ME7805S-G, ME7807S, ME7807S-G, ME78101S-G
Keywords - ME7707 MOSFET specs
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