ME7805S-G Specs and Replacement
Type Designator: ME7805S-G
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 44.1 nS
Cossⓘ - Output Capacitance: 358 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: DFN3.3X3.3
ME7805S-G substitution
- MOSFET ⓘ Cross-Reference Search
ME7805S-G datasheet
me7805s me7805s-g.pdf
ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS... See More ⇒
me7804s-g.pdf
ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are... See More ⇒
me7807s me7807s-g.pdf
ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low ... See More ⇒
me7804s-g.pdf
ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected D GENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m @VGS=10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 25m @ VGS=4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa... See More ⇒
Detailed specifications: ME7686-G, ME7705, ME7705-G, ME7707, ME7707-G, ME7732-G, ME7802S-G, ME7805S, IRFZ48N, ME7807S, ME7807S-G, ME78101S-G, ME7810S-G, ME7820S-G, ME78241S-G, ME7845S, ME7845S-G
Keywords - ME7805S-G MOSFET specs
ME7805S-G cross reference
ME7805S-G equivalent finder
ME7805S-G pdf lookup
ME7805S-G substitution
ME7805S-G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
