ME7805S-G. Аналоги и основные параметры

Наименование производителя: ME7805S-G

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 18 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 25 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 44.1 ns

Cossⓘ - Выходная емкость: 358 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm

Тип корпуса: DFN3.3X3.3

Аналог (замена) для ME7805S-G

- подборⓘ MOSFET транзистора по параметрам

 

ME7805S-G даташит

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 me7805s me7805s-g.pdf pdf_icon

ME7805S-G

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 12m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low RDS

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 me7804s-g.pdf pdf_icon

ME7805S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected GENERAL DESCRIPTION FEATURES RDS(ON) 16m @VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m @ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

 9.2. Size:959K  matsuki electric
 me7807s me7807s-g.pdf pdf_icon

ME7805S-G

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m @VGS=-10V effect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m @VGS=-4.5V technology. This high density process is especially tailored to Super high density cell design for extremely low

 9.3. Size:1242K  matsuki electric
 me7804s-g.pdf pdf_icon

ME7805S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected D GENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m @VGS=10V effect transistors are produced using high cell density, DMOS trench RDS(ON) 25m @ VGS=4.5V technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa

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