Справочник MOSFET. ME7805S-G

 

ME7805S-G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: ME7805S-G
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 18 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 49.9 nC
   trⓘ - Время нарастания: 44.1 ns
   Cossⓘ - Выходная емкость: 358 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.007 Ohm
   Тип корпуса: DFN3.3X3.3

 Аналог (замена) для ME7805S-G

 

 

ME7805S-G Datasheet (PDF)

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 me7805s me7805s-g.pdf

ME7805S-G ME7805S-G

ME7805S/ME7805S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7805S is the P-Channel logic enhancement mode power field RDS(ON) 7m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 12m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low RDS

 9.1. Size:1296K  1
 me7804s-g.pdf

ME7805S-G ME7805S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD ProtectedGENERAL DESCRIPTION FEATURES RDS(ON) 16m@VGS=10V The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 25m@ VGS=4.5V effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

 9.2. Size:959K  matsuki electric
 me7807s me7807s-g.pdf

ME7805S-G ME7805S-G

ME7807S/ME7807S-G P-Channel 30V (D-S) MOSFETGENERAL DESCRIPTION FEATURES The ME7807S is the P-Channel logic enhancement mode power field RDS(ON) 15m@VGS=-10Veffect transistors are produced using high cell density , DMOS trench RDS(ON) 29.5m@VGS=-4.5Vtechnology. This high density process is especially tailored to Super high density cell design for extremely low

 9.3. Size:1242K  matsuki electric
 me7804s-g.pdf

ME7805S-G ME7805S-G

ME7804S-G N-Channel 30V (D-S) MOSFET, ESD Protected DGENERAL DESCRIPTION FEATURES The ME7804-G N-Channel logic enhancement mode power field RDS(ON) 16m@VGS=10Veffect transistors are produced using high cell density, DMOS trench RDS(ON) 25m@ VGS=4.5Vtechnology. This high density process is especially tailored to minimize on-state resistance. These devices are pa

 9.4. Size:777K  matsuki electric
 me7802s-g.pdf

ME7805S-G ME7805S-G

ME7802S-G N-Channel 30V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)4.6m@VGS=10V The ME7802S-G is the N-Channel logic enhancement mode power RDS(ON)6.8m@VGS=4.5V field effect transistors are produced using high cell density , DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailo

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History: 2SK4097LS | SWP16N65K

 

 
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