ME7910D-G Specs and Replacement
Type Designator: ME7910D-G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 70.7 nS
Cossⓘ - Output Capacitance: 275 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: DFN3X3
ME7910D-G substitution
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ME7910D-G datasheet
me7910d me7910d-g.pdf
ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7910D is the Dual N-Channel logic enhancement mode RDS(ON) 14m @VGS=4.5V power field effect transistors are produced using high cell density, RDS(ON) 15m @VGS=4V DMOS trench technology. This high density process is especially RDS(ON) 17.5m @VGS=3.1V tailored ... See More ⇒
Detailed specifications: ME78241S-G, ME7845S, ME7845S-G, ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, IRFP064N, ME8029, ME8029-G, ME80N08AF, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, ME8117-G
Keywords - ME7910D-G MOSFET specs
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