All MOSFET. ME7910D-G Datasheet

 

ME7910D-G Datasheet and Replacement


   Type Designator: ME7910D-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 10.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 70.7 nS
   Cossⓘ - Output Capacitance: 275 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: DFN3X3
 

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ME7910D-G Datasheet (PDF)

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ME7910D-G

ME7910D/ME7910D-G Dual N-Channel 20-V(D-S) MOSFET , ESD Protection GENERAL DESCRIPTION FEATURES The ME7910D is the Dual N-Channel logic enhancement mode RDS(ON)14m@VGS=4.5V power field effect transistors are produced using high cell density, RDS(ON)15m@VGS=4V DMOS trench technology. This high density process is especially RDS(ON)17.5m@VGS=3.1V tailored

Datasheet: ME78241S-G , ME7845S , ME7845S-G , ME7890ED , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D , 5N50 , ME8029 , ME8029-G , ME80N08AF , ME80N08AF-G , ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G .

History: FHD5N60A | TSM3548DCX6 | IXFH14N100Q2 | SI4590DY | DH100P25I | SIHFBC30A | SM6107PSU

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