All MOSFET. ME80N08AF Datasheet

 

ME80N08AF Datasheet and Replacement


   Type Designator: ME80N08AF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 66 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 81 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31.7 nS
   Cossⓘ - Output Capacitance: 1150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
   Package: TO220F
 

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ME80N08AF Datasheet (PDF)

 ..1. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf pdf_icon

ME80N08AF

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 6.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08AF

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.2. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08AF

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 9.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N08AF

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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Datasheet: ME7890ED , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D , ME7910D-G , ME8029 , ME8029-G , IRFZ44N , ME80N08AF-G , ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G , ME8205B , ME8205B-G , ME9435AS .

History: AP4415GJ | 8N65KG-TA3-T | PMV30XN | AP4415GH | 8N60G-TF3-T | IRFD010 | PMV30UN

Keywords - ME80N08AF MOSFET datasheet

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