ME80N08AF Specs and Replacement

Type Designator: ME80N08AF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 66 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 81 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31.7 nS

Cossⓘ - Output Capacitance: 1150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm

Package: TO220F

ME80N08AF substitution

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ME80N08AF datasheet

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 me80n08af me80n08af-g.pdf pdf_icon

ME80N08AF

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi... See More ⇒

 6.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08AF

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p... See More ⇒

 6.2. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08AF

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON) 5m @VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high ... See More ⇒

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 me80n75f me80n75fg.pdf pdf_icon

ME80N08AF

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 10m @VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den... See More ⇒

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Detailed specifications: ME7890ED, ME7890ED-G, ME7900EN, ME7900EN-G, ME7910D, ME7910D-G, ME8029, ME8029-G, IRFZ44N, ME80N08AF-G, ME80N08AH, ME80N08AH-G, ME8117, ME8117-G, ME8205B, ME8205B-G, ME9435AS

Keywords - ME80N08AF MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.