Справочник MOSFET. ME80N08AF

 

ME80N08AF Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ME80N08AF
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 66 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 81 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 31.7 ns
   Cossⓘ - Выходная емкость: 1150 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.005 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для ME80N08AF

   - подбор ⓘ MOSFET транзистора по параметрам

 

ME80N08AF Datasheet (PDF)

 ..1. Size:1055K  matsuki electric
 me80n08af me80n08af-g.pdf pdf_icon

ME80N08AF

ME80N08AF/ME80N08AF-G N-Channel 80V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AF is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high densi

 6.1. Size:1244K  matsuki electric
 me80n08a me80n08a-g.pdf pdf_icon

ME80N08AF

ME80N08A/ME80N08A-G N-Channel 80V(D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08A is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high density p

 6.2. Size:871K  matsuki electric
 me80n08ah me80n08ah-g.pdf pdf_icon

ME80N08AF

ME80N08AH/ME80N08AH-G 80V N-Channel Enhancement Mode GENERAL DESCRIPTION FEATURES RDS(ON)5m@VGS=10V The ME80N08AH is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high

 9.1. Size:1006K  1
 me80n75f me80n75fg.pdf pdf_icon

ME80N08AF

ME80N75F / ME80N75F-G N- Channel 75-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10V The ME80N75F is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors are produced using high cell density, DMOS Exceptional on-resistance and maximum DC current trench technology. This high den

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Другие MOSFET... ME7890ED , ME7890ED-G , ME7900EN , ME7900EN-G , ME7910D , ME7910D-G , ME8029 , ME8029-G , IRFZ44N , ME80N08AF-G , ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G , ME8205B , ME8205B-G , ME9435AS .

History: AP85T03GP | CEM3258 | HGB050N14S | DAMI220N200 | DMP6110SSD | HGT022N12S

 

 
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