ME8205B PDF and Equivalents Search

 ..1. Size:1302K  matsuki electric
 me8205b me8205b-g.pdf

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m @VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m @VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi... See More ⇒

 8.1. Size:1053K  matsuki electric
 me8205e me8205e-g.pdf

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON) 22m @VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON) 23m @VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON) 26m @VGS=3.0V minimize on-state r... See More ⇒

 9.1. Size:256K  fairchild semi
 fdme820nzt.pdf

October 2013 FDME820NZT N-Channel PowerTrench MOSFET 20 V, 9 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using Fairchild Semiconductor s advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m... See More ⇒

 9.2. Size:723K  onsemi
 fdme820nzt.pdf

FDME820NZT N-Channel PowerTrench MOSFET General Description 20 V, 9 A, 18 m This Single N-Channel MOSFET has been designed using Features ON Semiconductor s advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG... See More ⇒