ME8205B - параметры транзистора MOSFET, его аналоги, datasheet

ME8205B Datasheet (PDF)

..1. Size:1302K matsuki electric
me8205b me8205b-g.pdf pdf_icon

ME8205B/ME8205B-G N-Channel 20V(D-S) MOSFET FEATURES GENERAL DESCRIPTION RDS(ON) 30 m@VGS=4.5V The ME8205B-G is the N-Channel logic enhancement mode power RDS(ON) 35m@VGS=2.5V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especi

8.1. Size:1053K matsuki electric
me8205e me8205e-g.pdf pdf_icon

ME8205E/ME8205E-G Dual N-Channel 20V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME8205E is the Dual N-Channel logic enhancement mode RDS(ON)22m@VGS=4.5V power field effect transistor, produced using high cell density DMOS RDS(ON)23m@VGS=4.0V trench technology. This high density process is especially tailored to RDS(ON)26m@VGS=3.0V minimize on-state r

9.1. Size:256K fairchild semi
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October 2013FDME820NZTN-Channel PowerTrench MOSFET 20 V, 9 A, 18 mFeatures General Description Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 AThis Single N-Channel MOSFET has been designed usingFairchild Semiconductors advanced Power Trench process to Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 32 m

9.2. Size:723K onsemi
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FDME820NZTN-Channel PowerTrench MOSFETGeneral Description20 V, 9 A, 18 mThis Single N-Channel MOSFET has been designed using FeaturesON Semiconductors advanced Power Trench process to Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 Aoptimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VG

Другие MOSFET... ME8029 , ME8029-G , ME80N08AF , ME80N08AF-G , ME80N08AH , ME80N08AH-G , ME8117 , ME8117-G , IRF540N , ME8205B-G , ME9435AS , ME9435AS-G , ME95N10F , ME95N10F-G , ME96N03-G , MEE2348 , MEE2348-G .