MEE3716T PDF and Equivalents Search

 ..1. Size:1367K  matsuki electric
 mee3716t.pdf

MEE3716T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716T is a N-Channel enhancement mode power field effect RDS(ON) 14m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on state resistan... See More ⇒

 7.1. Size:1632K  matsuki electric
 mee3716f.pdf

Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON) 14m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st... See More ⇒

 8.1. Size:1198K  matsuki electric
 mee3710t.pdf

MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON) 23m @VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance ... See More ⇒

 8.2. Size:1328K  matsuki electric
 mee3712t.pdf

MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec... See More ⇒

 8.3. Size:1279K  matsuki electric
 mee3710-g.pdf

MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 23m @VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp... See More ⇒

 8.4. Size:1295K  matsuki electric
 mee3712f.pdf

MEE3712F N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712F is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec... See More ⇒

 8.5. Size:957K  matsuki electric
 mee3718t.pdf

MEE3718T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3718T is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 23m @VGS=6V technology. This advanced technology is especially tailored to minimize Low Gate Charge on state resistance and gate charge, and en... See More ⇒

 8.6. Size:1283K  matsuki electric
 mee3712h.pdf

MEE3712H N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 18m @VGS=10V The MEE3712H is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec... See More ⇒