MEE3716T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: MEE3716T
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 166.7 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 75 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 40 nC
Время нарастания (tr): 30.3 ns
Выходная емкость (Cd): 702 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.014 Ohm
Тип корпуса: TO220
MEE3716T Datasheet (PDF)
mee3716t.pdf
MEE3716T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716T is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on state resistan
mee3716f.pdf
Preliminary-MEE3716F N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3716F is a N-Channel enhancement mode power field effect RDS(ON)14m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) Low Gate Charge technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and maximum DC current on st
mee3710t.pdf
MEE3710T N-Channel 100-V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3710T is a N-Channel enhancement mode power field effect RDS(ON)23m@VGS=10V transistors, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON) technology. This advanced technology is especially tailored to minimize Exceptional on-resistance
mee3712t.pdf
MEE3712T N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712T is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
mee3710-g.pdf
MEE3710-G N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)23m@VGS=10V The MEE3710-G is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is esp
mee3712f.pdf
MEE3712F N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712F is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
mee3718t.pdf
MEE3718T N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE3718T is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)23m@VGS=6V technology. This advanced technology is especially tailored to minimize Low Gate Charge on state resistance and gate charge, and en
mee3712h.pdf
MEE3712H N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)18m@VGS=10V The MEE3712H is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistor, using Force-MOS patented Extended Trench Gate (ETG) Exceptional on-resistance and maximum DC current technology. This advanced technology is espec
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