MEE4294K2 PDF and Equivalents Search

 

MEE4294K2 PDF Specs and Replacement


   Type Designator: MEE4294K2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 48 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 69.5 nS
   Cossⓘ - Output Capacitance: 868 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO252
 

 MEE4294K2 substitution

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MEE4294K2 PDF Specs

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MEE4294K2

MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extreme... See More ⇒

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MEE4294K2

MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely ... See More ⇒

 7.1. Size:1518K  matsuki electric
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MEE4294K2

MEE4294-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒

 7.2. Size:1044K  matsuki electric
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MEE4294K2

MEE4294T2 N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON) 11.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒

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Detailed specifications: MEE4292HT , MEE4292K-G , MEE4292P-G , MEE4292T , MEE42942-G , MEE4294HP-G , MEE4294HT , MEE4294K , 2N7002 , MEE4294K2-G , MEE4294K-G , MEE4294P2-G , MEE4294P-G , MEE4294T2 , MEE4298-G , MEE4298HT , MEE4298K-G .

History: IPD90N04S4-03

Keywords - MEE4294K2 MOSFET specs

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