MEE4294P-G MOSFET. Datasheet pdf. Equivalent
Type Designator: MEE4294P-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 28 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 49.2 nC
trⓘ - Rise Time: 69.5 nS
Cossⓘ - Output Capacitance: 868 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: TO251
MEE4294P-G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MEE4294P-G Datasheet (PDF)
mee4294p-g.pdf
MEE4294P-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O
mee4294p2-g.pdf
MEE4294P2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294P2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS
mee4294k mee4294k-g.pdf
MEE4294K/MEE4294K-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely
mee4294k2 mee4294k2-g.pdf
MEE4294K2/MEE4294K2-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294K2-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extreme
mee4294-g.pdf
MEE4294-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)
mee4294t2.pdf
MEE4294T2 N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294T2 is a N-Channel enhancement mode power field effect RDS(ON)11.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)
mee4294ht.pdf
MEE4294HT N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE4294HT is a N-Channel enhancement mode power field effect RDS(ON)12m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) Super high density cell design for extremely low RDS(ON)technology. This advanced technology is especially tailored to minimize Exceptional on-resistance and
mee42942-g.pdf
MEE42942-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE42942-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O
mee4294hp-g.pdf
MEE4294HP-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES RDS(ON)10m@VGS=10VThe MEE4294HP-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Gate Exceptional on-resistance and maximum DC current(ETG) technology. This advanced technology is esp
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: IRFI4905
History: IRFI4905
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