MEE7292-G MOSFET PDF: N-Ch, 100V, 49.5A. Full specification with pinout and replacement list

MEE7292-G PDF Specs and Replacement

   Type Designator: MEE7292-G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 49.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 48.5 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: POWERDFN5X6

MEE7292-G substitution

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MEE7292-G PDF Specs

..1. Size:905K matsuki electric
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MEE7292-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON) 11m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON) on... See More ⇒

8.1. Size:896K matsuki electric
mee7296-g.pdf pdf_icon

MEE7296-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)... See More ⇒

8.2. Size:874K matsuki electric
mee72962-g.pdf pdf_icon

MEE72962-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON) 10.5m @VGS=10V transistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON) 16.5m @VGS=4.5V technology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O... See More ⇒

8.3. Size:885K matsuki electric
mee7298-g.pdf pdf_icon

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFET GENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m (typ.)@VGS=10V effect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m (typ.)@VGS=4.5V (ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low... See More ⇒

Detailed specifications: MEE4294P2-G , MEE4294P-G , MEE4294T2 , MEE4298-G , MEE4298HT , MEE4298K-G , MEE4298T , MEE6240T , 13N50 , MEE72962-G , MEE7296-G , MEE7298-G , MEE7630-G , MEE7636-G , MEE7816AS-G , MEE7816S-G , 2SK815 .