Справочник MOSFET. MEE7292-G

 

MEE7292-G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: MEE7292-G
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 49.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 48.5 ns
   Cossⓘ - Выходная емкость: 739 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: POWERDFN5X6
     - подбор MOSFET транзистора по параметрам

 

MEE7292-G Datasheet (PDF)

 ..1. Size:905K  matsuki electric
 mee7292-g.pdf pdf_icon

MEE7292-G

MEE7292-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7292-G is a N-Channel enhancement mode power field effect RDS(ON)11m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)on

 8.1. Size:896K  matsuki electric
 mee7296-g.pdf pdf_icon

MEE7292-G

MEE7296-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7296-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(ON)

 8.2. Size:874K  matsuki electric
 mee72962-g.pdf pdf_icon

MEE7292-G

MEE72962-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE72962-G is a N-Channel enhancement mode power field effect RDS(ON)10.5m@VGS=10Vtransistor, using Force-MOS patented Extended Trench Gate (ETG) RDS(ON)16.5m@VGS=4.5Vtechnology. This advanced technology is especially tailored to minimize Super high density cell design for extremely low RDS(O

 8.3. Size:885K  matsuki electric
 mee7298-g.pdf pdf_icon

MEE7292-G

Preliminary-MEE7298-G N-Channel 100V(D-S) MOSFETGENERAL DESCRIPTION FEATURES The MEE7298-G is a N-Channel enhancement mode power field RDS(ON)=5.85m(typ.)@VGS=10Veffect transistor, using Force-MOS patented Extended Trench Gate RDS(ON)=7.95m(typ.)@VGS=4.5V(ETG) technology. This advanced technology is especially tailored Super high density cell design for extremely low

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IPD400N06NG | BUK96180-100A | APM7334K | FQI15P12TU | WMB115N15HG4 | MTDK3S6R | SSM3K15AMFV

 

 
Back to Top

 


 
.