MEE7816AS-G Datasheet and Replacement
Type Designator: MEE7816AS-G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 15.5 nC
tr ⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 119 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN3X3DUAL
MEE7816AS-G Datasheet (PDF)
mee7816as-g.pdf

MEE7816AS-G Dual N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10VThe MEE7816AS-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON)effect transistor, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC currentGate(ETG) technology. This advanced technology
mee7816s.pdf

Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, EMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro
mee7816s-g.pdf

Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)100m@VGS=10V The MEE7816S is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistors, using Force-MOS patented Extended Trench Gate(ETG) Exceptional on-resistance and maximum DC current technology. This advanced t
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