MEE7816AS-G Datasheet. Specs and Replacement
Type Designator: MEE7816AS-G 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 27.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: DFN3X3DUAL
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MEE7816AS-G substitution
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MEE7816AS-G datasheet
mee7816as-g.pdf
MEE7816AS-G Dual N-Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816AS-G is a N-Channel enhancement mode power field Super high density cell design for extremely low RDS(ON) effect transistor, using Force-MOS patented Extended Trench Exceptional on-resistance and maximum DC current Gate(ETG) technology. This advanced technology ... See More ⇒
mee7816s.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816S is the N-Channel logic enhancement mode power Super high density cell design for extremely low RDS(ON) field effect transistors, using high cell density, EMOS trench Exceptional on-resistance and maximum DC current technology. This high density pro... See More ⇒
mee7816s-g.pdf
Preliminary - MEE7816S-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 100m @VGS=10V The MEE7816S is a N-Channel enhancement mode power field effect Super high density cell design for extremely low RDS(ON) transistors, using Force-MOS patented Extended Trench Gate(ETG) Exceptional on-resistance and maximum DC current technology. This advanced t... See More ⇒
Detailed specifications: MEE4298T, MEE6240T, MEE7292-G, MEE72962-G, MEE7296-G, MEE7298-G, MEE7630-G, MEE7636-G, AON6380, MEE7816S-G, 2SK815, MDD2601, NCE1579C, SMP730, HCA60R040, MS5N100, MS5N100S
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