MS5N100S Datasheet and Replacement
Type Designator: MS5N100S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220F
MS5N100S substitution
MS5N100S Datasheet (PDF)
ms5n100 ms5n100s ms5n100ft ms5n100fe ms5n100fd.pdf
MS5N100/S/FT/FE/FDN-channel 1000V 3.5 - 5AGeneral featuresType V R IDSS(@Tjmax) DS(on) DMS5N100 1000 V
Datasheet: MEE7816AS-G , MEE7816S-G , 2SK815 , MDD2601 , NCE1579C , SMP730 , HCA60R040 , MS5N100 , P60NF06 , MS5N100FT , MS5N100FE , MS5N100FD , SJMN600R70F , HCA60R290 , HCA65R165 , HCA70R180 , HCA90R300 .
History: SGP100N45T | TMU6N70G
Keywords - MS5N100S MOSFET datasheet
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History: SGP100N45T | TMU6N70G
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