MS5N100S Specs and Replacement
Type Designator: MS5N100S
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.7 nS
Cossⓘ - Output Capacitance: 106 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.2 Ohm
Package: TO220F
MS5N100S substitution
- MOSFET ⓘ Cross-Reference Search
MS5N100S datasheet
ms5n100 ms5n100s ms5n100ft ms5n100fe ms5n100fd.pdf
MS5N100/S/FT/FE/FD N-channel 1000V 3.5 - 5A General features Type V R I DSS(@Tjmax) DS(on) D MS5N100 1000 V ... See More ⇒
Detailed specifications: MEE7816AS-G, MEE7816S-G, 2SK815, MDD2601, NCE1579C, SMP730, HCA60R040, MS5N100, AO4407, MS5N100FT, MS5N100FE, MS5N100FD, SJMN600R70F, HCA60R290, HCA65R165, HCA70R180, HCA90R300
Keywords - MS5N100S MOSFET specs
MS5N100S cross reference
MS5N100S equivalent finder
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MS5N100S substitution
MS5N100S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IAUC28N08S5L230 | 7N50 | JMSH0602AG | KIA10N65H | HY3210M | RZQ045P01TR | 2SK1498
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