All MOSFET. HCD65R2K7 Datasheet

 

HCD65R2K7 Datasheet and Replacement


   Type Designator: HCD65R2K7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 29 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 7.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: DPAK
 

 HCD65R2K7 substitution

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HCD65R2K7 Datasheet (PDF)

 ..1. Size:413K  semihow
 hcd65r2k7.pdf pdf_icon

HCD65R2K7

April 2020HCD65R2K7650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.2 A Excellent stability and uniformityRDS(on), max 2.7 100% Avalanche TestedQg, Typ 4.1 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SM

 6.1. Size:425K  semihow
 hcd65r2k2.pdf pdf_icon

HCD65R2K7

June 2020HCD65R2K2650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 2.5 A Excellent stability and uniformityRDS(on), max 2.2 100% Avalanche TestedQg, Typ 6.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch Mode Power Supply (SMP

 8.1. Size:437K  semihow
 hcd65r450.pdf pdf_icon

HCD65R2K7

Sep 2020HCD65R450650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 9.2 A Excellent stability and uniformityRDS(on), max 0.45 100% Avalanche Tested Built-in ESD DiodeQg, Typ 20 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Switch

 8.2. Size:436K  semihow
 hcd65r830.pdf pdf_icon

HCD65R2K7

July 2020HCD65R830650V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 5.5 A Excellent stability and uniformityRDS(on), max 0.83 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal CircuitD-PAK SYMBOL Swi

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Datasheet: HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 , IRFZ24N , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 .

History: SM6012NSUC | MDP1923TH

Keywords - HCD65R2K7 MOSFET datasheet

 HCD65R2K7 cross reference
 HCD65R2K7 equivalent finder
 HCD65R2K7 lookup
 HCD65R2K7 substitution
 HCD65R2K7 replacement

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