HCD65R2K7 - аналоги, параметры транзистора - Справочник транзисторов

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April 2020 HCD65R2K7 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.2 A Excellent stability and uniformity RDS(on), max 2.7 100% Avalanche Tested Qg, Typ 4.1 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SM

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June 2020 HCD65R2K2 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 2.5 A Excellent stability and uniformity RDS(on), max 2.2 100% Avalanche Tested Qg, Typ 6.2 nC Application Package & Internal Circuit D-PAK SYMBOL Switch Mode Power Supply (SMP

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Sep 2020 HCD65R450 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 9.2 A Excellent stability and uniformity RDS(on), max 0.45 100% Avalanche Tested Built-in ESD Diode Qg, Typ 20 nC Application Package & Internal Circuit D-PAK SYMBOL Switch

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July 2020 HCD65R830 650V N-Channel Super Junction MOSFET Features Key Parameters Parameter Value Unit Very Low FOM (RDS(on) X Qg) BVDSS @Tj,max 700 V Extremely low switching loss ID 5.5 A Excellent stability and uniformity RDS(on), max 0.83 100% Avalanche Tested Built-in ESD Diode Qg, Typ 11.2 nC Application Package & Internal Circuit D-PAK SYMBOL Swi

Другие MOSFET... HCA90R300 , HCA90R450 , HCA90R800 , HCD60R260 , HCD60R490 , HCD60R750 , HCD60R900 , HCD65R2K2 , IRFZ24N , HCD65R450 , HCD65R830 , HCD70R910 , HCD80R1K2 , HCD80R1K4 , HCD90R1K0 , HCD90R1K6 , HCD90R450 .