HCF70R910 Datasheet and Replacement
Type Designator: HCF70R910
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 13 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.96 Ohm
Package: 8DFN5X6
HCF70R910 substitution
HCF70R910 Datasheet (PDF)
hcf70r910.pdf
April 2020HCF70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 4.9 A Excellent stability and uniformityRDS(on), max 0.96 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL
hcf70r360.pdf
April 2020HCF70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.39 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL
hcf70r600.pdf
April 2020HCF70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.65 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL S
Datasheet: HCD90R1K0 , HCD90R1K6 , HCD90R450 , HCD90R800 , HCF65R320 , HCF65R550 , HCF70R360 , HCF70R600 , IRF9640 , HCFL60R115 , HCFL60R150 , HCFL60R190 , HCFL60R290 , HCFL60R350 , HCFL65R130 , HCFL65R210 , HCFL65R380 .
History: RQJ0603LGDQA | AON6908
Keywords - HCF70R910 MOSFET datasheet
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: RQJ0603LGDQA | AON6908
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