HCF70R910 - параметры транзистора MOSFET, его аналоги, datasheet

HCF70R910 Datasheet (PDF)

..1. Size:454K semihow
hcf70r910.pdf pdf_icon

April 2020HCF70R910700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 4.9 A Excellent stability and uniformityRDS(on), max 0.96 100% Avalanche Tested Built-in ESD DiodeQg, Typ 11.2 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL

8.1. Size:435K semihow
hcf70r360.pdf pdf_icon

April 2020HCF70R360700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 750 V Extremely low switching lossID 10.6 A Excellent stability and uniformityRDS(on), max 0.39 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL

8.2. Size:454K semihow
hcf70r600.pdf pdf_icon

April 2020HCF70R600700V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 700 V Extremely low switching lossID 6.7 A Excellent stability and uniformityRDS(on), max 0.65 100% Avalanche Tested Built-in ESD DiodeQg, Typ 16 nCApplicationPackage & Internal Circuit8DFN 5x6 SYMBOL S

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