All MOSFET. HCFL60R115 Datasheet

 

HCFL60R115 Datasheet and Replacement


   Type Designator: HCFL60R115
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 202 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 26.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.127 Ohm
   Package: DFN8X8
      - MOSFET Cross-Reference Search

 

HCFL60R115 Datasheet (PDF)

 ..1. Size:434K  semihow
 hcfl60r115.pdf pdf_icon

HCFL60R115

May 2020HCFL60R115600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 26.9 A Excellent stability and uniformityRDS(on), max 127 m 100% Avalanche Tested Built-in ESD DiodeQg, Typ 65 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 6.1. Size:433K  semihow
 hcfl60r150.pdf pdf_icon

HCFL60R115

May 2020HCFL60R150600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 21.7 A Excellent stability and uniformityRDS(on), max 0.165 100% Avalanche Tested Built-in ESD DiodeQg, Typ 50 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Sw

 6.2. Size:433K  semihow
 hcfl60r190.pdf pdf_icon

HCFL60R115

May 2020HCFL60R190600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 17.9 A Excellent stability and uniformityRDS(on), max 0.21 100% Avalanche Tested Built-in ESD DiodeQg, Typ 40 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

 7.1. Size:413K  semihow
 hcfl60r290.pdf pdf_icon

HCFL60R115

May 2020HCFL60R290600V N-Channel Super Junction MOSFETFeatures Key ParametersParameter Value Unit Very Low FOM (RDS(on) X Qg)BVDSS @Tj,max 650 V Extremely low switching lossID 13.1 A Excellent stability and uniformityRDS(on), max 0.32 100% Avalanche Tested Built-in ESD DiodeQg, Typ 27 nCApplicationPackage & Internal CircuitDFN8x8 SYMBOL Swi

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: CHM85A3PAGP | ALD1103DB | SQ9407EY-T1 | TK7P65W | SFFX054Z

Keywords - HCFL60R115 MOSFET datasheet

 HCFL60R115 cross reference
 HCFL60R115 equivalent finder
 HCFL60R115 lookup
 HCFL60R115 substitution
 HCFL60R115 replacement

 

 
Back to Top

 


 
.